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DMN2005K
1.2
1.0
1.6
1.2
T A = 25°C
0.8
I D = 1mA
0.6
I D = 250μA
0.8
0.4
0.4
0.2
0
-50
-25
0 25 50 75 100 125 150
0
0
0.2
0.4 0.6 0.8 1.0
1.2
T A , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
60
V SD , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
50
40
30
20
C iss
f = 1MHz
10
C oss
0
0
C rss
5 10 15
20
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
DMN2005K
Document number: DS30734 Rev. 7 - 2
4 of 6
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November 2013
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